4X reduction extreme ultraviolet interferometric lithography
نویسندگان
چکیده
منابع مشابه
Nanoscale patterning in high resolution HSQ photoresist by interferometric lithography with tabletop extreme ultraviolet lasers
Arrays of nanodots and nanoholes were patterned with a highly coherent tabletop 46.9 nm laser on high resolution hydrogen silsesquioxane photoresist using multiple exposure interferometric lithography. The authors observed for =46.9 nm radiation a penetration depth in excess of 150 nm. This laser-based extreme ultraviolet interferometric setup allows printing of 0.5 0.5 mm2 areas with different...
متن کاملPatterning of nano-scale arrays by table-top extreme ultraviolet laser interferometric lithography.
Arrays of nanodots were directly patterned by interferometric lithography using a bright table-top 46.9 nm laser. Multiple exposures with a Lloyd's mirror interferometer allowed to print arrays of 60 nm FWHM features. This laser-based extreme ultraviolet interferometric technique makes possible to print different nanoscale patterns using a compact table-top set up.
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P. Wachulak, M. Grisham, S. Heinbuch, D. Martz, W. Rockward, D. Hill, J. J. Rocca, C. S. Menoni, E. Anderson, and M. Marconi* National Science Foundation Engineering Research Center for Extreme Ultraviolet Science & Technology, Colorado State University, 1373 Campus Delivery, Fort Collins, Colorado 80523, USA Department of Electrical and Computer Engineering, Colorado State University, 1373 Cam...
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In order to address the crucial problem of high-resolution low line-edge roughness resist for extreme ultraviolet (EUV) lithography, researchers require significant levels of access to high-resolution EUV exposure tools. The prohibitively high cost of such tools, even microfield tools, has greatly limited this availability and arguably hindered progress in the area of EUV resists. To address th...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2008
ISSN: 1094-4087
DOI: 10.1364/oe.16.009106